搜搜考试网英语翻译This insight can be used to design systems in which the
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英语翻译
This insight can be used to design systems in which the valence and conduction band energies can be aligned between matrix and inclusion.Of course,the embedded nanostructures
simultaneously scatter phonons to produce large reductions in lattice thermal conductivity.The combination of these effects amounts to a powerful design strategy for advanced thermoelectrics.
It goes beyond the recent ideas of reducing the lattice thermal conductivity through all-scale hierarchical architectures,because it adds to it a new theory-guided concept which is
the band alignment engineering across the matrix/inclusion interface.In the case of p-type PbSe an extraordinary ZT of 1.6 at 923 K is achieved,16 which is the highest value ever
reported for a Te-free chalcogenide.
The generality of the matrix/second-phase-inclusion band alignment concept is also evident in its application to the PbS system with metal sulfides,MS (M ¼ Pb,Cd,Zn,Ca and Sr)（这个四分之一文章里显示的是等于号,复制过来等于号就变成四分之一了） as the second phases.15,54 The variations of carrier mobility in PbS depend on the valence and conduction band energy levels of the NaCl-type metal sulfides,MS (M ¼ Pb,Cd,Zn,Ca and Sr).（四分之一同上）
This insight can be used to design systems in which the valence and conduction band energies can be aligned between matrix and inclusion.Of course,the embedded nanostructures
simultaneously scatter phonons to produce large reductions in lattice thermal conductivity.The combination of these effects amounts to a powerful design strategy for advanced thermoelectrics.
It goes beyond the recent ideas of reducing the lattice thermal conductivity through all-scale hierarchical architectures,because it adds to it a new theory-guided concept which is
the band alignment engineering across the matrix/inclusion interface.In the case of p-type PbSe an extraordinary ZT of 1.6 at 923 K is achieved,16 which is the highest value ever
reported for a Te-free chalcogenide.
The generality of the matrix/second-phase-inclusion band alignment concept is also evident in its application to the PbS system with metal sulfides,MS (M ¼ Pb,Cd,Zn,Ca and Sr)（这个四分之一文章里显示的是等于号,复制过来等于号就变成四分之一了） as the second phases.15,54 The variations of carrier mobility in PbS depend on the valence and conduction band energy levels of the NaCl-type metal sulfides,MS (M ¼ Pb,Cd,Zn,Ca and Sr).（四分之一同上）
这种认识可以用来设计一种系统,其中,价带和导带的能量可以在基体和杂质之间对准.当然,嵌入的纳米结构同时驱散声子,是晶格的热导率大大降低.这些效应的组合得出一个适用于高级热电元件（材料）的强有力的设计策略.
它超越了通过全方位分层体系结构爱降低晶格热导率的最新想法,因为它增加了一个新的理论指导的概念,它就是跨越基体/杂质界面的带对准技术.在p型PbSe的情况下,在923 K下实现了1.6的非凡ZT值,[16] 这是迄今报道的无Te硫化物的最高值.
基体/第二相杂质带对准概念的通用性在其应用与带金属硫化物MS（M =Pb,Cd,Zn,Ca 和Sr）作为第二相的PbS系统中也很明显.[15,54] PbS中载流子迁移率的变化取决于NaCl-型金属硫化物MS（M =Pb,Cd,Zn,Ca 和Sr）的价带和导带的能级
它超越了通过全方位分层体系结构爱降低晶格热导率的最新想法,因为它增加了一个新的理论指导的概念,它就是跨越基体/杂质界面的带对准技术.在p型PbSe的情况下,在923 K下实现了1.6的非凡ZT值,[16] 这是迄今报道的无Te硫化物的最高值.
基体/第二相杂质带对准概念的通用性在其应用与带金属硫化物MS（M =Pb,Cd,Zn,Ca 和Sr）作为第二相的PbS系统中也很明显.[15,54] PbS中载流子迁移率的变化取决于NaCl-型金属硫化物MS（M =Pb,Cd,Zn,Ca 和Sr）的价带和导带的能级
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